Product Characteristics
1. 3D Copper Topology
50-200μm tall copper bumps/pillars (vs. ≤10μm flatness in standard PCBs) enable vertical interconnects and mechanical anchoring.
2. Localized Thick Copper
200-400μm copper thickness in critical areas (vs. ≤70μm), providing 3-5x higher current capacity.
3. Embedded Thermal Management
Direct chip-to-copper contact reduces thermal resistance by >40% (e.g. 30℃ IGBT junction temp drop).
4. Precision Placement
Photolithography achieves ±5μm alignment accuracy with minimum 80μm bump diameter.
5. Hybrid Material Integration
Compatible with copper-ceramic (AlN) and copper-resin composite substrates.
Product Application Field
Power Electronics
Tech Edge: 400μm local copper carries 200A+, bumps direct-attach to IGBT/SiC die (40% lower R<sub>th</sub>)
Use Cases: EV motor drives, solar inverters, industrial VFDs
01
Advanced Packaging
Tech Edge: 80μm Cu pillars enable ≤50μm-pitch 2.5D/3D IC interconnects (30% cost saving vs. TSV)
Use Cases: HBM interposers, Chiplet integration substrates
02
Automotive High-Voltage Systems
Tech Edge: Cu bumps provide mechanical anchoring for high-current joints (survive 20G vibration)
Use Cases: EV battery management units (BMU), ultra-fast charging ports
03
High-Frequency RF
Tech Edge: Cu bumps form λ/4 waveguides (≤1° phase error at 77GHz)
Use Cases: 5G mmWave feed networks, satellite T/R modules
04
Aerospace Power
Tech Edge: Cu-AlN composites withstand -55℃~200℃ thermal cycling (>500 cycles)
Use Cases: Satellite power converters, aircraft engine controllers
05
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